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The physical departments, together with R&D Centre CEPLANT, offer several research & development and cooperation activities in various fields including nanomaterials, plasma physics and chemistry or super hard and functional coatings.
This unique proprietary plasma generator is already widely recognised by the scientific and industrial community as the diffuse coplanar surface barrier discharge – DCSBD.
The DCSBD is an atmospheric pressure plasma generator that operates in ambient air conditions. It generates a diffuse surface plasma with a very high power density of up to 150 W/cm3.
Upon request, we can customise the DCSBD and embed it into any type of reactor available for the treatment of rigid or flexible samples.
For the treatment of flexible samples (e.g. polymer foils) our team have recently developed a cutting edge plasma source based on the DCSBD. Plasma is generated on a curved surface and it fits directly into roll-to-roll lines for surface treatment of foils or finishing of coatings on foils.
We have more than 20 years of experience with atmospheric pressure plasma. We can assist you with any customisations needed of your own plasma source, design a new one or help you to decide which plasma generator from a different supplier should be suitable for your application.
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We offer the deposition of various hard and protective films by magnetron sputtering:
- Preparation of wide range on coatings (metals, oxides, nitrides, ceramics etc.) on a wide range of substrates
- The coatings can be deposited by sputtering using DC, p-DC, or RF of HIPIMS power source
- The substrate can be Ar cleaned prior to deposition, and bias can be used during the deposition
- Oxides or nitrides can be deposited either from compound targets or by reactive process controlled by fast-feedback system.
- The coating can be prepared using HIPIMS (High Power Impulse Magnetron Sputtering) process
- Modelling and diagnostics of the deposition process
- Consultations service
In the cleanroom facility in the Department of Condensed Matter Physics we offer the following deposition techniques:
- Growth of SiO<sub>2</sub> layers on silicon prepared by dry or wet oxidation.
- Layers of AlCuSi and TiW grown on 100mm silicon wafers by magnetron sputtering.
Our basic technique for the optical analysis of multi-layered structures is spectroscopic ellipsometry that can reach sub-nanometre precision in thickness estimation for well-defined samples. We can offer also the mapping of non-homogeneous samples and vibrational characterisation of the material by extension of the spectral range into the infrared domain. This is complemented by Raman scattering where the material contrast can be obtained with a spatial resolution below 1 micrometre.
Contact: Department of Condensed Matter Physics, Filip Münz, Josef Humlíček, Dušan Hemzal.
We can provide expertise in measuring the angular distribution, spectrum or polarisation of emitted light from various sources, together with absolute flux measurements (namely in the visible range). Special cases (e.g. mid-infrared source characteristics) can be evaluated in comparison with standardised sources.
Contact: Department of Condensed Matter Physics, Filip Münz.
We have long-time expertise in a broad range of X-ray scattering methods: X-ray diffraction (XRD), X-ray topography, X-ray reflectometry (XRR), (grazing incidence) small-angle scattering (SAXS, GISAXS). We provide analysis of crystal structure perfection and homogeneity, defects in crystals, thicknesses of layers and interface roughness. We can also provide expertise in in-situ studies for structure morphology changes during sample annealing.
Contact: Department of Condensed Matter Physics, Ondřej Caha, Jiří Novák.
We offer processing experience in our clean room (dust-free) facility, 120 m2 in class 100 and 1000, which is equipped with standard semiconductor technologies for electronic device (chip) processing of silicon wafers (mainly wafers of diameter 100 mm). We have wet and dry oxidation, boron and phosphorus doping (from solid targets), AlCuSi and TiW sputtering for wafer metallisation, optical lithography, wet (chemical) and dry (O<sub>2</sub> plasma) etching and cleaning.
Samples can be characterised by optical spectroscopy, optical and electron microscopy, mechanical profilometry and electric measurements.
Production technology in the laboratory comes from the long-time collaboration with the company ON Semiconductor.
Contact: Department of Condensed Matter Physics, Petr Mikulík
We can provide expertise in a broad range of microscopy methods. The optical microscopy laboratory at the Department of Condensed Matter Physics is well equipped. An atomic force microscope (AFM) is running at CEPLANT.
We operate two electron microscopes in the physics departments.
The TESCAN Mira one at the CEPLANT has a FEG source and except for the standard SEM techniques it also allows EDX, WDS and EBIC analysis.
The FEI Quanta 3D one at the Department of Condensed Matter Physics has a thermal source, and aside from the standard SEM techniques it allows ESEM mode, in-situ sample heating and has a focused ion beam (FIB) and gas-injection system (GIS).
Contact: Department of Condensed Matter Physics, Mojmír Meduňa, Petr Mikulík, CEPLANT, Jana Jurmanová.