Seminar ÚFKL: Tomáš Novák

Department of Condensed Matter Physics (ÚFKL) invites you to the lecture

Tomáš Novák (ON Semiconductor, Rožnov pod Radhoštěm): GaN-on-Si substrates and applications for power electronics

Abstract:

GaN-on-Si technology enables realization of cost and performance competitive solutions for high power switching applications. Owing to the unique properties of the III-nitrides, the AlGaN/GaN HEMTs are gaining more and more market attraction, competing partially with Si superjunction technology and SiC, another wide bandgap semiconductor. In the seminary, an overview of the III-nitride material properties and the AlGaN/GaN HEMT principle will be presented, followed by results of development of AlN nucleation layer and carbon doping of GaN, achieved in ON Semiconductor Czech republic. Reliability of the e-mode HEMTs with pGaN gate will be further discussed and examples of applications of GaN transistors will be presented.